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Power Integrations Unveils 2,200V Gallium Nitride Technology to Enter High-Voltage EV and Data Center Markets

Power Integrations announces its PowiGaN gallium nitride technology now supports a 2,200V voltage rating, setting a new benchmark for commercially available GaN devices. The breakthrough targets electric vehicles, high-voltage data centers, and renewable energy sectors, challenging silicon carbide’s dominance in high-voltage power systems.

Editorial Team8/20/2026Updated 8/20/2026

2,200V Gallium Nitride Technology Breaks Barriers for High-Voltage Applications

Global semiconductor solutions provider Power Integrations announced on August 12 that its PowiGaN gallium nitride (GaN) technology now supports a voltage rating of up to 2,200V, making it the highest-voltage commercially available GaN device on the market. This technological breakthrough enables GaN to enter high-voltage applications traditionally dominated by silicon carbide (SiC), including electric vehicle (EV) powertrains, high-voltage data centers, renewable energy systems, and high-voltage direct current (HVDC) infrastructure.

Jennifer Lloyd, President and CEO of Power Integrations, stated that the 2,200V PowiGaN technology provides substantial voltage margin for high-voltage power systems while maintaining high switching frequencies, which helps maximize power density. She noted that GaN devices offer higher energy conversion efficiency and switching frequencies compared to traditional silicon transistors, effectively reducing the size of passive components and enhancing overall system performance. In contrast, alternatives such as lower-frequency SiC or stacked low-voltage GaN devices increase system complexity and reduce reliability.

Currently, 1,700V versions of PowiGaN integrated circuits are being designed into single-stage auxiliary power systems for data centers, while 1,250V versions are replacing traditional stacked solutions in the main power paths of 800VDC data centers, simplifying system architecture. Power Integrations previously published a technical white paper detailing the power architecture design for 800VDC data centers. The introduction of the 2,200V rating will further extend applications to higher-voltage bus architectures, providing technical support for future EV and data center designs that may adopt 1,500V systems.

Market Outlook Bright as Gallium Nitride Challenges Silicon Carbide Dominance

Roy Dagher, Technology and Market Analyst for Compound Semiconductors at Yole Group, highlighted that the 2,200V voltage rating significantly expands the application potential of GaN in high-voltage power systems. He stated that this technology provides sufficient voltage margin for single-stage topologies and future-proofs designs for upcoming 1,500V EV and data center systems. Historically, GaN devices were limited to low-voltage applications such as auxiliary power due to voltage constraints, with SiC dominating the main power paths. The 2,200V breakthrough now positions GaN to compete directly with SiC in higher-voltage applications.

Dagher further projected that the global power GaN device market will reach $3.5 billion by 2031, with the expansion into high-voltage applications serving as a key growth driver. Power Integrations indicated that the 2,200V PowiGaN technology will initially be deployed in photovoltaic inverters, battery energy storage systems, and HVDC infrastructure, with potential future applications in EV powertrains and auxiliary power systems.

Despite the strong potential of the 2,200V GaN technology, specific adoption plans from automakers or data center operators have not yet been disclosed. Additionally, details regarding the efficiency improvements, power density enhancements, and cost competitiveness of 2,200V GaN compared to SiC in real-world applications remain to be validated. Power Integrations emphasized that this technology will bring greater design flexibility and performance advantages to high-voltage power systems, though its ability to replace SiC will ultimately depend on market acceptance and real-world performance.

Technological Advantages and Future Challenges Coexist

Power Integrations noted that PowiGaN technology not only improves energy conversion efficiency compared to traditional silicon transistors but also reduces the size and weight of passive components through high switching frequencies, thereby enhancing system power density. This is particularly significant for EV and data center applications that prioritize lightweight and high-efficiency designs. Furthermore, the 2,200V rating provides a technological foundation for future 1,500V power systems, ensuring forward compatibility and scalability in system design.

However, GaN technology still faces challenges in high-voltage applications, including long-term reliability, thermal management, and cost control. SiC technology, currently more mature, has accumulated considerable experience in high-voltage applications. Power Integrations stated that it will continue to optimize PowiGaN technology and collaborate with industry partners to promote the widespread adoption of GaN in high-voltage power systems. As the technology matures and market demand grows, GaN is expected to compete with SiC in high-voltage applications, offering more efficient power solutions for industries such as EVs, renewable energy, and data centers.

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